2830 s. fairview st. santa ana, ca 92704 ph: 714.979.8220 f ax: 714.557.5989 ms c 10 46 . pd f updated: november 1998 TD3162 electrical characteristics @ 25 o c features ? v ery thin construction ? passivated mesa structure for very low leakage reverse currents ? epitaxial structure minimizes forward voltage drop ? hermetically sealed, extremely low profile ceramic seal package ? diode assembly has matched thermal coe f ficient of expansion ? w eldable / solderable gold plated copper interconnects ? extremely low f .i. t . rate of 1 applications ? extreme t emperature cycling environments ? used on the international space station alpha solar array bypass diode 30 v olts 5.0 amps screening ? t emperature cycling ? high t emperature reverse bias ? power burn-in ? e lectrical cycling ? hermeticity junction t emperature range - 1 15 to +175 o c qualification ? humidity t esting ? thermal cycling (20,000 cycles) ? bond strength ? e lectrical cycling ? radiation (electron and proton) ? extended reliability testing; 4,000 hours at 300 o c mechanical outline s y m bol ch a r a c ter i st i c cond i t i ons m a x un i ts ir r e v e r s e ( l e a k a g e) c u r r en t v r = 5 vdc 1 ua m p s vf1 fo r w a r d v o l t a g e i f = 2 . 5 a p u l se test p w = 3 0 0 m s, d / c < 2 % 8 25 m v o l ts vf2 fo r w a r d v o l t a g e i f = 2 . 5 a p u l se test p w = 3 0 0 m s, d / c < 2 % , t c = - 1 10 c 2 v olts b v r b r e a k d o w n v o l t a g e i r = 1 . 0 m a ( m i n ) 7 0 v o l t s
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